Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers

Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

J. Karch,1 S. A. Tarasenko,2 E. L. Ivchenko,2 J. Kamann,1 P. Olbrich,1 M. Utz,1 Z. D. Kvon,3 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, D-93040 Regensburg, Germany 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia (Received 7 March 2011...

Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

Random telegraph signal ~RTS! amplitude has been studied in a submicron n-channel metal oxide semiconductor field effect transistor as a function of gate voltage. To do so, we have employed a complete simulator of metal oxide semiconductor devices where the effect of a single acceptor trap placed in the silicon oxide was taken into account. The dominant role played by the screening of the charg...

Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors